MTI  |  SKU: ISTea050503S1

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

€113,85

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InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

MTI

10x10x0.45 mm  InSb  wafer   (N type, Te doped)

  • Size:                       5x5x0.3 mm
  • Orientation            <100> +/-0.5o  with two reference flats
  •  Polishing:             one-side side polishd ( back side etched )
  • Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5o                                                                    
  • Doping                                                                Te doped
  • Conductivity type                                               N type
  • Carrier Concentration                                     (0.19- 0.5)E18 @77K
  • Mobility                                                               >(3.58-5.6)E4 cm2/Vs
  • EPD                                                                    <1200 - 1500  / cm 2

     

 


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