MTI  |  SKU: ISTecB50D045C1US

InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished

€2.191,76

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InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished

MTI

2" InSb  wafer   (N type, Te-doped)

  •  Size:                      2" dia x 0.45-0.5mm  thick with thickness tolerance +/- 25 um
  • Orientation            <111>B +/-0.5o  
  •  Polishing:             one-side side(Sb) polishd ( back side etched )
  • Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         <111>B  +/- 0.5o               
  • Doping                                                                Te-doped
  • Conductivity type                                               N type
  • Carrier Concentration                                      (5.0E17 - 2.0E18) cm-3 @77K
  • Mobility                                                                24,000-34,000 cm2/Vs
  • EPD                                                                    <1.0 E+3  / cm -2

     


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