MTI | SKU:
OTF1200XPEC4LV50
1200C Max. PECVD Tube Furnace w/ 4 Channels Gas Delivery & Vacuum Pump - OTF-1200X-PEC4LV
Regular price
€0,00
Unit price
Delivery and Shipping to EU
Delivery and Shipping to EU
We will add in the quotation, the shipping, insurance, customs clearance costs.
1200C Max. PECVD Tube Furnace w/ 4 Channels Gas Delivery & Vacuum Pump - OTF-1200X-PEC4LV
MTI
OTF-1200X-PEC4LV is acompact PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system, which consists of 300W RF plasma source, 2" or 3.14" O.D optional split tube furnace, 4 channels precision mass flow meter with gas mixing tank, and high-quality mechanical pump. The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid-state, and benefits:
- Lower temperature processing compared to conventional CVD.
- Film stress can be controlled by high/low frequency mixing techniques.
- Control over stoichiometry via process conditions.
- Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.
Specifications
|
Split Tube furnace
|
|
|
|
|
|
|
Vacuum Pump and valve
|
|
| Optional Oilless Pump |
Please order the oilless pump for zero contamination:![]() |
Mass Flowmeter EQ-GSL-LCD |
|
| Temperature Controller |
|
|
Optional
|
|
|
Overall dimensions
|
|
|
Warranty
|
One year limited warranty with lift time support (Consumable parts such as processing tubes, O-rings, and heating elements are not covered by the warranty, please order the replacement at related products below.) |
|
Laptop, software & WiFi Control (Optional)
|
|
|
Compliance |
|














