Products

MTI

Thermal insulation for Heating cover of VTC100PA, 6" INCH

MTI

Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm

MTI

Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm

MTI

Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US

MTI

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

MTI

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

MTI

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

MTI

Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm

MTI

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001

MTI

Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001