Crystal Substrate A-Z

MTI

GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

MTI

GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

MTI

GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished - GSUa50D05C2US

MTI

GaSb Wafer (100), undoped, 2"x0.5 mm ,1sp

MTI

GaSb Wafer (100), undoped, 10x10x0.5 mm, 1sp - GSUa101005S1

MTI

GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

MTI

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp

MTI

GaP Wafer, Zn-doped (111) 2"x0.45 mm, 1sp

MTI

GaP Wafer, Undoped (111) 3"x0.45 mm, 1sp

MTI

GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1

MTI

GaP Wafer, undoped (111) 2"x0.4 mm, 2sp,

MTI

GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp

MTI

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

MTI

GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp - GPUa101005S2

MTI

GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp

MTI

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

MTI

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp

MTI

GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

MTI

GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2

MTI

GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp