Crystal Substrate A-Z

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical Grade

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP

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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical Grade

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GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, 1SP

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GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp

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GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, 1sp

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GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

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GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp

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GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

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Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished

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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP

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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Fe-doped 10x10x0.5mm, 1SP

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Ga2O3-beta Single Crystal Substrate, <010>+/-1 degree ori, 5 x 5 x 0.35mm, 2SP, Research grade with "Twin"

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Ga2O3-Beta Single Crystal Substrate, <010>+/-1 degree ori, 10x10x0.35mm, 2SP, Research grade with "Twin"

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Ga2O3-Beta Single Crystal Substrate, <-201> ori, 5x5x0.6mm, 1SP