MTI

MTI

CsI Single crystal block 10x10x5.0 mm, fine ground - CSI101050SN

MTI

CsPbBr3 single crystal substrate (100 ) 10x10x0.5mm, 1sp

MTI

Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp

MTI

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

MTI

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

MTI

Cu Metallic Substrate ( polycrystalline) 10x10x0.5mm, 1 side polished

MTI

Cu Metallic Substrate ( polycrystalline) 10x10x1.0mm, 1 side polished

MTI

Cu Single Crystal Substrate: (100)+/-1 degree, 10x10x0.5 mm, 1side polished

MTI

Cu Single Crystal Substrate: (100), 10mm Dia. x 1.0 mm, 1 side polished - MCCua10D10C1

MTI

Cu Single Crystal Substrate: (100), 10x10x0.5 mm, 1side polished

MTI

Cu Single Crystal Substrate: (100), 10x10x1.0 mm, 1side polished - MCCua101010S1

MTI

Cu Single Crystal Substrate: (100), 2" Dia. x1.0 mm, 1 side polished - MCCua50D10C1

MTI

Cu Single Crystal Substrate: (100), 5x5x1.0 mm, 1side polished

MTI

Cu Single Crystal Substrate: (110), 10mmDia. x1.0 mm, 1 side polished,

MTI

Cu Single Crystal Substrate: (110), 10x10x0.5 mm, 1 side polished

MTI

Cu Single Crystal Substrate: (110), 10x10x1.0 mm, 1 side polished - MCCue101010S1