Crystal Substrate A-Z

MTI

SrLaAlO4 Single Crystal Substrate(001) 10x10x1.0mm,2sp with edge orientation

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SrLaAlO4 (100), 5x5x0.5mm, 2SP - SLAOa050505S2

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SrLaAlO4 (100) 5x5x0.5mm, 1SP - SLAOa050505S1

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SrLaAlO4 (100) 10x5x0.5mm, 2SP - SLAOa100505S2

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SrLaAlO4 (100) 10x5x0.5mm, 1SP - SLAOa100505S1

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SrLaAlO4 (100) ,10x10x0.5mm, 1SP - SLAOa101005S1

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SrLaAlO4 (001) 5x5x0.5mm, 1SP - SLAOb050505S1

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SrLaAlO4 (001) 10x5x1.0mm, 1sp - SLAOb100510S1

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SrLaAlO4 (001) 10x10x1.0mm, 1SP - SLAOb101010S1

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SrLaAlO4 (001) 10x10x0.5mm, 2SP - SLAb101005S2

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SrLaAlO4 (001) 10x10x0.5mm, 1SP - SLAOb101005S1

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SrTiO3 (100) 5x5x0.5 mm , 1 SP - STOa050505S1

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SrTiO3 (100) 5x5x0.1mm , 1 SP - STOa050501S1

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SrTiO3 (100) 30mm dia. x0.5 mm 2SP - STOa30D05C2

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SrTiO3 (100) 30mm dia. x0.5 mm 1SP - STOa30D05C1

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SrTiO3 (100) 10x5x1.0 mm Epi polished wafer 1 SP, - STOa100510S1

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SrTiO3 (100) 10x5x0.5mm, 2sp, - STOa100505S2

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SrTiO3 (100) 10x5x0.5mm, 1sp - STOa100505S1

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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)

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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )