Crystal Substrate A-Z

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Single Crystal CaCO3, (100) Ori, 10x10x1.0mm, 1SP, .- CCOa101010S1

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Single Crystal CaCO3, (001) Orientation, 10x10x0.5mm, 2SP - CCOb101005S2

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Single Crystal CaCO3 (100) Orientation, 5x5x0.5mm, One Side EPI Polished.

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Single Crystal CaCO3 (100) Orientation, 10x10x0.5mm, One Side EPI Polished - CCOa101005S1

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Silicon-on-Sapphire (11-02, R Plane), 5mm x 5mm x 0.46 mm, 2sp, Film: 0.5um thick

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Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick

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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

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SiC Heating Element for KSL-1400A4 muffle Furnace - KSL-1400A4-HEL

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SiC - 6H (0001), 5x5x0.33 mm, 2 SP

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SiC - 6H (0001), 10x10x0.26 mm , two sides polished