Crystal Substrate A-Z

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SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished

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SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished

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SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1

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SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4

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SiC - 4H (0001), 5x5x0.33 mm , two sides polished

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SiC - 4H (0001), 5x5x0.3 mm , one side polished

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SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2US

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SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished

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SiC - 4H (0001), 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1

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SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US

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Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

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Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

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Si Wafer (111), Prime Grade, 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SiAsc101D05C1R0001

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Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack

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Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm

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Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US

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Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

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Si Wafer (111), 4"dia x 0.5 mm, 1SP, N Type (undoped, FZ R>5000 ohm-cm)

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Si Wafer (111), 4"dia x 0.45 mm, 1SP, N Type (P doped), resistivity:0.4-0.6ohm-cm

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Si Wafer (111), 4" dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SIUc101D05C1R1000