Crystal Substrate A-Z

MTI

Si Wafer (111), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm) - SIUc101D05C1R10000

MTI

Si Wafer (111), 4 " dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm

MTI

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

MTI

Si wafer (111), 3 " dia x 0.5 mm, 2sp, N type, undoped, resistivity: > 1000ohm-cm - SIUc76D05C2R1000

MTI

Si wafer (111), 3 " dia x 0.5 mm, 1sp, N type, undoped, resistivity: > 1000ohm-cm - SIUc76D05C1R1000

MTI

Si Wafer (111), 2" dia x 0.5mm, 1SP, FZ Undoped., R> 1000 ohm-cm

MTI

Si Wafer (111), 2" dia x 0.5mm, 1SP, FZ Undoped, R> 5000 ohm-cm

MTI

Si Wafer (111), 2" dia x 0.5 mm, 1SP, N type, P doped,R:1-10 ohm.cm

MTI

Si Wafer (111), 2" dia x 0.5 mm, 1SP, N type, P doped,R:0.1-1.0 ohm.cm

MTI

Si Wafer (111), 2" dia x 0.3 mm, 1SP, N type, As- doped, R<=0.005 ohm-cm

MTI

Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1

MTI

Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, As- doped, R<0.005 ohm-cm - SIAsc50D0279C1

MTI

Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

MTI

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

MTI

Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000

MTI

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

MTI

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

MTI

Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1

MTI

Si Wafer (111) 2" dia x 0.5mm, 1SP, FZ, Undoped, R> 10,000 ohm-cm - SIUc50D05C1R10000

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1