Crystal Substrate A-Z

MTI

Si Wafer (100), 4" dia x 0.5 mm, 2SP,N-type, Undoped with resistivities: >10,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000

MTI

Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type , Undoped with resistivities: >15,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type, Undoped with resistivities:> 10,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type, Undoped with resistivities: 8000-9000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type ,Undoped with resistivities:> 15,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >5000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >1,000 ohm-cm - SiUa101D05C1R1000

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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, Sb doped, R:0.01-0.02 ohm.cm - SISba101D05C1R001

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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

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Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

MTI

Si wafer (100), 3 "dia x0.5 mm, 2sp, N type, Undoped, R>1000 ohm-cm - SIUa76D05C2R1000

MTI

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1

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Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm