Crystal Substrate A-Z

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, As doped ,R:0.005-0.05 ohm.cm - SIAsc50D05C2R0005

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Si Wafer (111) 2" dia x 0.5 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D05C1R1

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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

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Si Wafer (111) 2" dia x 0.279 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D0279C1R1

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Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

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Si Wafer (110), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

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Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1

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Si Wafer (110), 2" dia x 0.5 mm, 1SP, N type, P doped, R: 1-10 ohm-cm

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Si Wafer (110), 2" dia x 0.5 mm t, 2SP, P type/ B doped, R:0.1-1.0ohm-cm

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Si wafer (110) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm

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Si Wafer (110) 2" dia x 0.5 mm, 2SP, P type, B doped, R:0.01-1.0 ohm-cm - SIBe50D05C2R001

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Si Wafer (110) 2" dia x 0.5 mm, 1SP, P type, B doped,R:1-10 ohm-cm

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Si Wafer (110) 2" dia x 0.5 mm t, 2SP, P type, B doped, R:8-12 ohm-cm

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Si Wafer (110) 2" dia x 0.5 mm t, 1SP, FZ, Undoped, resistivities: >1,000 ohm-cm - SiUe50D05C1R1000

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Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 2SP, R:1-10 ohm.cm

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Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 1SP, R:1-10 ohm.cm

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Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1

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Si wafer (100), 6 " dia x 0.65 - 0.7 mm, 1SP P type (B doped) with resistivities: 1-30ohm-cm - SIBa152D0675C1R1US

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Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm,

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Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm - SiPa101D05C1R1US