MTI

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GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

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GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp

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GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3

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GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3

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Gd2O3 (99.9%, 20-80 nm) Nanopowder ( 25 g ) - NPGd2O3

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GdScO3 (001)10x10x0.5mm 1sp - GSOb101005S1US

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GdScO3 (110) 10x10x0.5mm 1sp

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GdScO3 (110) 10x10x0.5mm 2sp

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GdScO3 (110) 5x5x0.5mm 1sp - GSOe050505S1US

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GdScO3 (110) 5x5x0.5mm 2sp

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Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm

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Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm

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Ge single crystal for evaporation, purity >99.999%, 5x5x5 mm as cut - Ge050550SN

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Ge single crystal substrate (100)N-type ,undoped ,1"x1"x0.5mm,2sp, R>50 ohm.cm

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Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>40 ohm.cm

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Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>50 ohm.cm

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Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.4mm 1sp,R>50 ohm.cm

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Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50

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Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm

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Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm