SiC (4H,6H,3C) Crystals

MTI

SiC - 4H (0001), 1" diá. x0,26 mm esp., una cara pulida - SC4Hz25D026C1US

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SiC - 4H (0001), 10x10x0,33 mm , Cara Si, 1SP - SC4HZ1010033S1

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SiC - 4H (0001), 2" diá. x0,3 mm esp., Una cara pulida

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SiC - 4H (0001), 2" diá. x0,33 mm esp., dos caras pulidas - SC4Hz50D033C2US

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SiC - 4H (0001), 5x5x0,3 mm , una cara pulida

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SiC - 4H (0001), 5x5x0,33 mm , dos caras pulidas

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SiC - 4H (0001)con 4 grados de hacia <11-20> /<10-10>, 10x10x0.33 mm , Cara Si, 1SP - SC4HZ1010033S1Deg4

MTI

SiC - 4H en eje <0001>+/- 0,5 grados 4" diá. x0,35 mm espesor. Semiaislante dos caras pulido (cara Si EPI- pulido)-1

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SiC - 6H (0001) 8 mm de diámetro x 0,3 mm de grosor, una cara pulida

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SiC - 6H (0001), 1/4 "x1/4 "x0,26 mm , dos caras pulidas

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SiC - 6H (0001), 10x10x0,26 mm , dos caras pulidas

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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

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SiC - 6H (0001), 5x5x0,33 mm, 2 SP

MTI

4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2 "dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

MTI

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2 "dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US